| PART |
Description |
Maker |
| NX5323EH |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX5315EH_06 NX5315EH NX5315EH-AZ NX5315EH06 |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
| NX5317 |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
1 310nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| DS1865 |
PON Triplexer Control and Monitoring Circuit
|
Maxim Integrated Products, Inc.
|
| DS1865TTR |
PON Triplexer Control and Monitoring Circuit
|
Maxim Integrated Products
|
| DS1865TTR |
PON Triplexer Control and Monitoring Circuit
|
MAXIM - Dallas Semiconductor
|
| G8931-04-15 |
Time response characteristics compatible with SONET and G/GE-PON
|
Hamamatsu Corporation
|
| BT-2442CS |
10G E-PON Asymmetrical OLT Tri-direction OSA
|
AVAGO TECHNOLOGIES LIMI...
|
| NX6240GP |
1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
California Eastern Labs
|
